SPEICHER KLEINER VERLUSTLEISTUNG IN P-KANAL-MOS-TECHNIK MIT SONDERPROZESSEN UND IN KOMPLEMENTAERKANAL-MOS-TECHNIK = MEMOIRE A FAIBLE PUISSANCE DISSIPEE DANS LA TECHNIQUE MOS-CANAL P AVEC DES PROCESSUS SPECIAUX ET DANS LA TECHNIQUE MOS COMPLEMENTAIREGOSER K.1973; NACHR.-TECH. Z.; DTSCH.; DA. 1973; VOL. 26; NO 1; PP. 9-15; ABS. ANGL.; BIBL. 17 REF.Serial Issue

SOME METHODS FOR DEFINING DESIGN RULES.GOSER K; SCHINDLBECK G.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 10; PP. 956-958; BIBL. 9 REF.Article

STATIC ESFI MOS (SOS) CELLS FOR HIGH-DENSITY MEMORIES.GOSER K; POMPER M.1975; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1975; VOL. 4; NO 4; PP. 220-225; BIBL. 11 REF.Article

Tunneling and thermal noise as limiting factors in microelectronicsGOSER, K.Microelectronics and reliability. 1988, Vol 28, Num 4, pp 605-611, issn 0026-2714Article

ANALYSE DES KLEINSIGNALVERHALTENS VON MOS-TRANSISTOREN MIT DER SCHNELLEN FOURIER-TRANSFORMATION. = ANALYSE DU COMPORTEMENT EN SIGNAUX FAIBLES DE TRANSISTORS MOS AU MOYEN DE LA TRANSFORMATION DE FOURIER RAPIDEBIERHENKE H; GOSER K.1975; ARCH. ELEKTRON. UEBERTRAG.-TECH.; DTSCH.; DA. 1975; VOL. 29; NO 1; PP. 20-23; ABS. ANGL.; BIBL. 8 REF.Article

AUFTEILUNG DER GATE-KANAL-KAPAZITAET AUF SOURCE UND DRAIN IM ERSATZSCHALTBILD EINES MOS-TRANSISTORS = DISTRIBUTION DE LA CAPACITE PORTE-CANAL ENTRE SOURCE ET DRAIN DANS LE CIRCUIT EQUIVALENT D'UN TRANSISTOR MOSGOSER K; STEINHUBL K.1972; SIEMENS FORSCH.-U. ENTURCKL.-BER.; DTSCH.; DA. 1972; VOL. 1; NO 3; PP. 284-286; ABS. ANGL.; BIBL. 2 REF.Serial Issue

Das Gravitationsgesetz und das Coulomb-Gesetz aus Sieht der Informationstheorie = A model for the gravitational and Coulomb law based an information theoryGOSER, K.Frequenz. 1989, Vol 43, Num 6, pp 156-160, issn 0016-1136, 5 p.Article

Die Hough-Transformation. Ein Verfahren zur Klassifizierung beliebiger Konturen = La transformation de Hough, méthode pour classer des contours arbitraires = The Hough transform ― a classification method for arbitrary contoursHESSE, H; GOSER, K.Robotersysteme. 1988, Vol 4, Num 1, pp 27-32, issn 0178-0026Article

Hot-carrier degradation of n-channel MOSFET's characterized by a gated-diode measurement techniqueGIEBEL, T; GOSER, K.IEEE electron device letters. 1989, Vol 10, Num 2, pp 76-78, issn 0741-3106Article

A simple, analytical model for hot-carrier induced degradation in n-channel Mosfet'sGIEBEL, T; GOSER, K.Microelectronics and reliability. 1992, Vol 32, Num 4, pp 545-555, issn 0026-2714Article

Stacked CMOS circuits integrated in laser-recrystallized silicon filmsHILLERINGMANN, U; GOSER, K.Microelectronics and reliability. 1992, Vol 32, Num 7, pp 941-944, issn 0026-2714Article

Intelligent memories in VLSIGOSER, K; FOELSTER, C; RUECKERT, U et al.Information sciences. 1984, Vol 34, Num 1, pp 61-82, issn 0020-0255Article

Reliability indicators for lift-off of bond wires in IGBT power-modulesFAROKHZAD, B; TÜRKES, P; WOLFGANG, E et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1863-1866, issn 0026-2714Conference Paper

Hebbian multilayer network in a wheelchair robotBÜHLMEIER, A; STEINER, P; ROSSMANN, M et al.Lecture notes in computer science. 1997, pp 727-732, issn 0302-9743, isbn 3-540-63631-5Conference Paper

Short- and long-term dynamics in a stochastic pulse stream neuron implemented in FPGAROSSMANN, M; BÜHLMEIER, A; MANTEUFFEL, G et al.Lecture notes in computer science. 1997, pp 1241-1246, issn 0302-9743, isbn 3-540-63631-5Conference Paper

Channel-length-independent hot-carrier degradation in analog p-MOS operationTHEWES, R; BROX, M; TEMPEL, G et al.IEEE electron device letters. 1992, Vol 13, Num 11, pp 590-592, issn 0741-3106Article

AC-only RF ID tags for barcode replacementBRIOLE, S; PACHA, C; GOSER, K et al.IEEE International Solid-State Circuits Conference. 2004, pp 438-439, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

1/f-noise of sub-100 nm-MOS-transistors fabricated by a special deposition and Etchback techniqueHORSTMANN, J. T; HILLERINGMANN, U; GOSER, K et al.Microelectronic engineering. 2000, Vol 53, Num 1-4, pp 213-216, issn 0167-9317Conference Paper

Characterization of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback techniqueHORSTMANN, J. T; HILLERINGMANN, U; GOSER, K et al.Microelectronic engineering. 1996, Vol 30, Num 1-4, pp 431-434, issn 0167-9317Conference Paper

Evaluation of the hot-carrier-induced offset voltage of differential pairs in analogue CMOS circuitsTHEWES, R; KIVI, M. J; GOSER, K. F et al.Quality and reliability engineering international. 1995, Vol 11, Num 4, pp 273-277, issn 0748-8017Conference Paper

Midbandgap materials for sub-100-nm MOS transistorsVIEREGGE, T; HORSTMANN, J. T; GOSER, K. F et al.Microelectronic engineering. 2002, Vol 61-62, pp 637-641, issn 0167-9317Conference Paper

Implementation of artificial neural networks into hardware : Concepts and limitationsGOSER, K. F.Mathematics and computers in simulation. 1996, Vol 41, Num 1-2, pp 161-171, issn 0378-4754Conference Paper

Monolithic integration of a silicon micromotor in combination with the CMOS drive circuit on one chipHORSTMANN, J. T; GOSER, K. F.Microelectronic engineering. 2003, Vol 67-68, pp 390-396, issn 0167-9317, 7 p.Conference Paper

Circuit and application aspects of tunnelling devices in a MOBILE configurationGLÖSEKÖTTER, P; PACHA, C; GOSER, K. F et al.International journal of circuit theory and applications. 2003, Vol 31, Num 1, pp 83-103, issn 0098-9886, 21 p.Article

Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodesPROST, W; AUER, U; TEGUDE, F.-J et al.International journal of circuit theory and applications. 2000, Vol 28, Num 6, pp 537-552, issn 0098-9886Article